Accession Number N20120014345
Title Characterization of 4H <000-1> Silicon Carbide Films Grown by Solvent-Laser Heated Floating Zone.
Publication Date Sep 2012
Media Count 14p
Personal Author A. Sayir A. A. Woodworth B. Raghothamachar M. Dudley P. G. Neudeck
Abstract Commercially available bulk silicon carbide (SiC) has a high number (>2000/sq cm) of screw dislocations (SD) that have been linked to degradation of high-field power device electrical performance properties. Researchers at the NASA Glenn Research Center have proposed a method to mass-produce significantly higher quality bulk SiC. In order for this bulk growth method to become reality, growth of long single crystal SiC fibers must first be achieved. Therefore, a new growth method, Solvent-Laser Heated Floating Zone (Solvent-LHFZ), has been implemented. While some of the initial Solvent-LHFZ results have recently been reported, this paper focuses on further characterization of grown crystals and their growth fronts. To this end, secondary ion mass spectroscopy (SIMS) depth profiles, cross section analysis by focused ion beam (FIB) milling and mechanical polishing, and orientation and structural characterization by x-ray transmission Laue diffraction patterns and x-ray topography were used. Results paint a picture of a chaotic growth front, with Fe incorporation dependant on C concentration.
Keywords Crystal growth
Degradation
Diffraction patterns
Laser heating
Performance tests
Silicon carbides
Single crystals
Solvents
X ray diffraction


 
Source Agency National Aeronautics and Space Administration
NTIS Subject Category 99D - Basic & Synthetic Chemistry
46D - Solid State Physics
49 - Electrotechnology
Corporate Author National Aeronautics and Space Administration, Cleveland, OH. NASA John H. Glenn Research Center at Lewis Field.
Document Type Technical report
Title Note N/A
NTIS Issue Number 1308
Contract Number NASA GRC SAA3-1048 DE-EE0001093/001

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