|
Accession Number
|
N20120014269
|
|
Title
|
Recent Power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Test Results.
|
|
Publication Date
|
Jun 2012
|
|
Media Count
|
8p
|
|
Personal Author
|
J. M. Lauenstein
|
|
Abstract
|
No abstract available
|
|
Keywords
|
Bias
Electric current
Electric power transmission
Electronic equipment
Field effect transistors
Gallium nitrides
Metal oxide semiconductors
Radiation dosage
Radiation hardening
Silicon carbides
Silicon junctions
|
|
|
Source Agency
|
National Aeronautics and Space Administration
|
|
NTIS Subject Category
|
49 - Electrotechnology
49H - Semiconductor Devices
|
|
Corporate Author
|
Goddard Space Flight Center, Greenbelt, MD.
|
|
Document Type
|
Technical report
|
|
Title Note
|
N/A
|
|
NTIS Issue Number
|
1307
|
|
Contract Number
|
N/A
|
