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Accession Number N20120010364
Title Effect of Compressive Stresses on Leakage Currents in Microchip Tantalum Capacitors.
Publication Date 2012
Media Count 11p
Personal Author A. Teverovsky
Abstract Microchip tantalum capacitors are manufactured using new technologies that allow for production of small size capacitors (down to EIA case size 0402) with volumetric efficiency much greater than for regular chip capacitors. Due to a small size of the parts and leadless design they might be more sensitive to mechanical stresses that develop after soldering onto printed wiring boards (PWB) compared to standard chip capacitors. In this work, the effect of compressive stresses on leakage currents in capacitors has been investigated in the range of stresses up to 200 MPa. Significant, up to three orders of magnitude, variations of currents were observed after the stress exceeds a certain critical level that varied from 10 MPa to 180 MPa for capacitors used in this study. A stress-induced generation of electron traps in tantalum pentoxide dielectric is suggested to explain reversible variations of leakage currents in tantalum capacitors. Thermo-mechanical characteristics of microchip capacitors have been studied to estimate the level of stresses caused by assembly onto PWB and assess the risk of stress-related degradation and failures. Keywords: tantalum capacitors, leakage current, soldering, reliability, mechanical stress.
Keywords Capacitors
Chips(Electronics)
Compressibility
Degradation
Dielectrics
Failure
Leakage
Printed circuits
Reliability
Risk
Tantalum
Thermodynamics
Volumetric efficiency


 
Source Agency National Aeronautics and Space Administration
NTIS Subject Category 49 - Electrotechnology
Corporate Author Goddard Space Flight Center, Greenbelt, MD.
Document Type Journal article
Title Note N/A
NTIS Issue Number 1226
Contract Number N/A

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