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Media Count:
N/A
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Date:
Nov 1994
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Author:
W. S. Hong J. S. Drewery T. Jing H. K. Lee S. N. Kaplan
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Electrical transport properties of the authors PECVD a-Si:H material has been improved by using hydrogen and/or helium dilution of silane and lower substrate temperature for deposition. For hydrogen-diluted material they have measured electron and hole mo ...
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Report Number:
LBL-36287 CONF-941061-14
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Contract Number:
AC03-76SF00098
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Project Number:
N/A
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Grant Number:
N/A
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Task Number:
N/A
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NTIS announcement issue:
9512
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"N/A" indicates no data is available for this field.
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