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Accession Number
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DE89010228
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Title
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Mathematical Model of the Gas-Phase and Surface Chemistry in GaAs MOCVD.
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Publication Date
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1989
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Media Count
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6p
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Personal Author
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M. E. Coltrin R. J. Kee
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Abstract
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This paper presents a detailed mathematical model of the coupled gas-phase chemistry, surface chemistry, and fluid mechanics in the MOCVD of GaAs from trimethylgallium and arsine in a rotating-disk reactor. The model predicts steady-state deposition rates ...
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Keywords
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Chemical Reactions
Chemical Vapor Deposition
ERDA/656003
ERDA/990230
Fluid Mechanics
Gallium Arsenides
Mathematical Models
Surfaces
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Source Agency
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Technical Information Center Oak Ridge Tennessee
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NTIS Subject Category
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99D - Basic & Synthetic Chemistry
46D - Solid State Physics
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Corporate Author
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Sandia National Labs., Albuquerque, NM.
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Document Type
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Conference proceedings
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Title Note
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N/A
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NTIS Issue Number
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8918
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Contract Number
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AC04-76DP00789
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