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Accession Number DE2012-1051893
Title Influence of Impurities in Module Packaging on Potential-Induced Degradation.
Publication Date Sep 2012
Media Count 10p
Personal Author J. Pankow P. Hacke R. Reedy S. Glick S. Johnston
Abstract Chemical compounds were added into crystalline silicon cell mini modules, including in the encapsulant, interfaces, and glass, to determine their effect on potential-induced degradation (PID). Fe, either in the glass or at the glass/encapsulant interface, was found to be correlated with increased PID, but the difference in module power loss was not statistically significant compared to controls. Additions of Cu, Cr, Pb, Sn, Ag, and Na compounds to either the encapsulant or at the glass/encapsulant interface did not appear correlated with PID. Lock-in thermography on bare cells affected by PID removed from the mini modules show highly localized areas of junction breakdown, and SIMS analysis indicates localized impurities as well, though a spatial relation between the two was not established. Deposition of a conductive layer on the front surface of the cell, either with semitransparent Ta or Poly 3,4-ethylenedioxythiophene (PEDOT), eliminated PID when the cells were stressed at -1000 V bias, 50 degrees C, with the glass face grounded for 140 h.
Keywords Chemical compounds
Crystalline silicon
Photovoltaic modules
Potential induced degradation(PID)
Solar cells

Source Agency Technical Information Center Oak Ridge Tennessee
NTIS Subject Category 97N - Solar Energy
71 - Materials Sciences
Corporate Author National Renewable Energy Lab., Golden, CO.
Document Type Technical report
Title Note N/A
NTIS Issue Number 1306
Contract Number N/A

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