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Accession Number
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DE2012-1046340
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Title
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Low Cost Production of InGaN for Next-Generation Photovoltaic Devices.
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Publication Date
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Jul 2012
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Media Count
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33p
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Personal Author
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G. S. Tompa N. M. Sbrockey
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Abstract
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The goal of this project is to develop a low-cost and low-energy technology for production of photovoltaic devices based on InGaN materials. This project builds on the ongoing development by Structured Materials Industries (SMI), of novel thin film deposition technology for Group III-Nitride materials, which is capable of depositing Group-III nitride materials at significantly lower costs and significantly lower energy usage compared to conventional deposition techniques. During this project, SMI demonstrated deposition of GaN and InGaN films using metalorganic sources, and demonstrated compatibility of the process with standard substrate materials and hardware components.
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Keywords
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Compatibility
Costs
Deposition
Gallium nitrides
Photovoltaic power supplies
Production
Substrates
Thin films
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Source Agency
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Technical Information Center Oak Ridge Tennessee
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NTIS Subject Category
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97N - Solar Energy
71 - Materials Sciences
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Corporate Author
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Cornell Univ., Ithaca, NY.
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Document Type
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Technical report
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Title Note
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N/A
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NTIS Issue Number
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1303
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Contract Number
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N/A
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