Accession Number DE2012-1046340
Title Low Cost Production of InGaN for Next-Generation Photovoltaic Devices.
Publication Date Jul 2012
Media Count 33p
Personal Author G. S. Tompa N. M. Sbrockey
Abstract The goal of this project is to develop a low-cost and low-energy technology for production of photovoltaic devices based on InGaN materials. This project builds on the ongoing development by Structured Materials Industries (SMI), of novel thin film deposition technology for Group III-Nitride materials, which is capable of depositing Group-III nitride materials at significantly lower costs and significantly lower energy usage compared to conventional deposition techniques. During this project, SMI demonstrated deposition of GaN and InGaN films using metalorganic sources, and demonstrated compatibility of the process with standard substrate materials and hardware components.
Keywords Compatibility
Costs
Deposition
Gallium nitrides
Photovoltaic power supplies
Production
Substrates
Thin films


 
Source Agency Technical Information Center Oak Ridge Tennessee
NTIS Subject Category 97N - Solar Energy
71 - Materials Sciences
Corporate Author Cornell Univ., Ithaca, NY.
Document Type Technical report
Title Note N/A
NTIS Issue Number 1303
Contract Number N/A

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