Documents in the NTIS Technical Reports collection are the results of federally funded research. They are directly submitted to or collected by NTIS from Federal agencies for permanent accessibility to industry, academia and the public.  Before purchasing from NTIS, you may want to check for free access from (1) the issuing organization's website; (2) the U.S. Government Printing Office's Federal Digital System website http://www.gpo.gov/fdsys; (3) the federal government Internet portal USA.gov; or (4) a web search conducted using a commercial search engine such as http://www.google.com.
Accession Number DE2012-1045807
Title Shubnikow-de Haas Oscillations in the Bulk Rashba Semiconductor BiTeI.
Publication Date Jul 2012
Media Count 11p
Personal Author C. Bell H. Murakawa H. Y. Hwang J. G. Checkelsky M. S. Bahramy N. Nagaosa R. Arita Y. Kaneko Y. Onose Y. Tokura
Abstract Bulk magnetoresistance quantum oscillations are observed in high quality single crystal samples of BiTeI. This compound shows an extremely large internal spin-orbit coupling, associated with the polarity of the alternating Bi, Te, and I layers perpendicular to the c-axis. The corresponding areas of the inner and outer Fermi surfaces around the A-point show good agreement with theoretical calculations, demonstrating that the intrinsic bulk Rashba-type splitting is nearly 360 meV, comparable to the largest spin-orbit coupling generated in heterostructures and at surfaces.
Keywords Coupling
Fermi level
Magnetoresistance
Monocrystals
Oscillations
Polarity
Spin

 
Source Agency Technical Information Center Oak Ridge Tennessee
NTIS Subject Category 46 - Physics
Corporate Author Stanford Linear Accelerator Center, CA.
Document Type Technical report
Title Note N/A
NTIS Issue Number 1226
Contract Number DE-AC02-76SF00515

Science and Technology Highlights

See a sampling of the latest scientific, technical and engineering information from NTIS in the NTIS Technical Reports Newsletter

Acrobat Reader Mobile    Acrobat Reader