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Accession Number ADA596687
Title Metamorphic InAsSb/AlInAsSb Heterostructures for Optoelectronic Applications.
Publication Date Mar 2013
Media Count 7p
Personal Author D. Donetsky D. Wang G. Belenky G. Kipshidze Y. Lin
Abstract Metamorphic heterostructures containing bulk InAs(1-x)Sbx layers and AlInAsSb barriers were grown on GaSb substrates. The lattice mismatch (up to 2.1%) between the GaSb substrates and the InAsSb layers was accommodated by the growth of GaInSb linearly graded buffers. The 1 micrometers thick InAsSb(0.44) layer with an absorption edge above 9 micrometer exhibited an in-plane residual strain of about 0.08%. InAs(1-x)Sbx structures with x=0.2 and x=0.44 operated as light emitting diodes at 80K demonstrated output powers of 90 muW and 8 muW at 5 micrometer and 8 micrometer, respectively.
Keywords Buffers
Light emitting diodes
Molecular spectroscopy

Source Agency Non Paid ADAS
NTIS Subject Category 49E - Optoelectronic Devices & Systems
Corporate Author State Univ. of New York at Stony Brook.
Document Type Journal article
Title Note Journal article.
NTIS Issue Number 1416
Contract Number W911NF-11-1-0109

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