Documents in the NTIS Technical Reports collection are the results of federally funded research. They are directly submitted to or collected by NTIS from Federal agencies for permanent accessibility to industry, academia and the public.  Before purchasing from NTIS, you may want to check for free access from (1) the issuing organization's website; (2) the U.S. Government Printing Office's Federal Digital System website http://www.gpo.gov/fdsys; (3) the federal government Internet portal USA.gov; or (4) a web search conducted using a commercial search engine such as http://www.google.com.
Accession Number ADA596687
Title Metamorphic InAsSb/AlInAsSb Heterostructures for Optoelectronic Applications.
Publication Date Mar 2013
Media Count 7p
Personal Author D. Donetsky D. Wang G. Belenky G. Kipshidze Y. Lin
Abstract Metamorphic heterostructures containing bulk InAs(1-x)Sbx layers and AlInAsSb barriers were grown on GaSb substrates. The lattice mismatch (up to 2.1%) between the GaSb substrates and the InAsSb layers was accommodated by the growth of GaInSb linearly graded buffers. The 1 micrometers thick InAsSb(0.44) layer with an absorption edge above 9 micrometer exhibited an in-plane residual strain of about 0.08%. InAs(1-x)Sbx structures with x=0.2 and x=0.44 operated as light emitting diodes at 80K demonstrated output powers of 90 muW and 8 muW at 5 micrometer and 8 micrometer, respectively.
Keywords Buffers
Detectors
Fabrication
Growth(General)
Light emitting diodes
Molecular spectroscopy
Optoelectronics
Reprints
Substrates

 
Source Agency Non Paid ADAS
NTIS Subject Category 49E - Optoelectronic Devices & Systems
Corporate Author State Univ. of New York at Stony Brook.
Document Type Journal article
Title Note Journal article.
NTIS Issue Number 1416
Contract Number W911NF-11-1-0109

Science and Technology Highlights

See a sampling of the latest scientific, technical and engineering information from NTIS in the NTIS Technical Reports Newsletter

Acrobat Reader Mobile    Acrobat Reader