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Accession Number ADA571058
Title Process Dependence of H Passivation and Doping in H-implanted ZnO.
Publication Date Jan 2013
Media Count 9p
Personal Author B. G. Svensson D. C. Look K. M. Johansen R. Schifano Z. Zhang
Abstract We used depth-resolved cathodoluminescence spectroscopy (DRCLS), photoluminescence (PL) spectroscopy and temperature-dependent Hall-effect (TDHE) measurements to describe the strong dependence of H passivation and doping in H-implanted ZnO on thermal treatment. Increasing H implantation dose increases passivation of Zn and oxygen vacancy-related defects, while reducing deep level emissions. Over annealing temperatures of 100-400 deg C at different times, 1 h annealing at 200 deg C yielded the lowest DRCLS deep level emissions highest TDHE carrier mobility, and highest near band-edge PL emission. These results describe the systematics of dopant implantation and thermal activation on H incorporation in ZnO and their effects on its electrical properties.
Keywords Annealing
Cathodoluminescence
Defects(Materials)
Doping
Drcls(Depth-resolved cathodoluminescence spectroscopy)
Electrical properties
Emission
Hall effect
Hydrogen
Implantation
Nbe emission
Nbe(Near band edge)
Passivation
Photoluminescence
Photons
Pl spectroscopy
Pl(Photoluminescence)
Spectroscopy
Tdhe(Temperature-dependent hall-effect)
Temperature
Wide gap semiconductors
Zinc oxides


 
Source Agency Non Paid ADAS
NTIS Subject Category 46 - Physics
Corporate Author Air Force Research Lab., Wright-Patterson AFB, OH. Sensors Directorate.
Document Type Journal article
Title Note Journal article.
NTIS Issue Number 1315
Contract Number FA9550-10-1-0079 HC1047-05-D-4005

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