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Accession Number
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ADA566074
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Title
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Rare Earth 4f Hybridization with the GaN Valence Band.
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Publication Date
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2012
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Media Count
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9p
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Personal Author
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J. C. Petrosky J. W. McClory L. Wang S. R. McHale W. Mei
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Abstract
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The placement of the Gd, Er and Yb 4f states within the GaN valence band has been explored by both experiment and theory. The 4d-4f photoemission resonances for various rare-earth(RE)-doped GaN thin films (RE = Gd, Er, Yb) provide an accurate depiction of the occupied 4f state placement within the GaN. The resonant photoemission show that the major Er and Gd RE 4f weight is at about 5-6 eV below the valence band maximum, similar to the 4f weights in the valence band of many other RE-doped semiconductors. For Yb, there is a very little resonant enhancement of the valence band of Yb-doped GaN, consistent with a large 4f(exp 14-delta) occupancy. The placement of the RE 4f levels is in qualitative agreement with theoretical expectations.
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Keywords
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Emplacement
Gallium nitrides
Gd agent
Hybridization
Photoelectric emission
Rare earth compounds
Rare earth elements
Resonance
Thin films
Valence bands
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Source Agency
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Non Paid ADAS
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NTIS Subject Category
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99D - Basic & Synthetic Chemistry
49E - Optoelectronic Devices & Systems
99F - Physical & Theoretical Chemistry
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Corporate Author
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Air Force Inst. of Tech., Wright-Patterson AFB, OH.
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Document Type
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Journal article
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Title Note
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Journal article.
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NTIS Issue Number
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1306
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Contract Number
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HDTRA1-07-1-0008 BRBAA08-I-2-0128
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