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Accession Number ADA566074
Title Rare Earth 4f Hybridization with the GaN Valence Band.
Publication Date 2012
Media Count 9p
Personal Author J. C. Petrosky J. W. McClory L. Wang S. R. McHale W. Mei
Abstract The placement of the Gd, Er and Yb 4f states within the GaN valence band has been explored by both experiment and theory. The 4d-4f photoemission resonances for various rare-earth(RE)-doped GaN thin films (RE = Gd, Er, Yb) provide an accurate depiction of the occupied 4f state placement within the GaN. The resonant photoemission show that the major Er and Gd RE 4f weight is at about 5-6 eV below the valence band maximum, similar to the 4f weights in the valence band of many other RE-doped semiconductors. For Yb, there is a very little resonant enhancement of the valence band of Yb-doped GaN, consistent with a large 4f(exp 14-delta) occupancy. The placement of the RE 4f levels is in qualitative agreement with theoretical expectations.
Keywords Emplacement
Gallium nitrides
Gd agent
Photoelectric emission
Rare earth compounds
Rare earth elements
Thin films
Valence bands

Source Agency Non Paid ADAS
NTIS Subject Category 99D - Basic & Synthetic Chemistry
49E - Optoelectronic Devices & Systems
99F - Physical & Theoretical Chemistry
Corporate Author Air Force Inst. of Tech., Wright-Patterson AFB, OH.
Document Type Journal article
Title Note Journal article.
NTIS Issue Number 1306
Contract Number HDTRA1-07-1-0008 BRBAA08-I-2-0128

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