Accession Number ADA564106
Title 13.5 nm High Harmonic Generation Driven by a Visible Noncollinear Optical Parametric Amplifier.
Publication Date Nov 2011
Media Count 9p
Personal Author F. X. Kaertner
Abstract EUV lithography, using 13.5-nm light, is considered to be the preferred technology for next generation microelectronic circuit fabrication. The introduction of EUV Lithography was delayed already several times and is in danger to be delayed again due to the lack of a high enough power light source allowing for volume production. In this work we investigate whether High Harmonic Generation can be used for such a light source. We build a high energy tunable visible Optical Parametric Amplifier, and drive High Harmonic Generation in Argon and Helium. We study how the efficiency, and the highest producible photon energy, depend on the driver wavelength. We are able to observe EUV light up to the desired wavelength of 13.5 nm. The results agree well with a previously developed theoretical model. We predict that using a 630- nm driver in Helium could have a conversion efficiency of about 10-5. Unfortunately, our pulse energy was too low to confirm this experimentally. This efficiency is too low to construct a EUV source useful for lithography. However, further investigations such as the use of cavity enhancement are necessary to ultimately decide, whether HHG is a viable path to an efficient EUV source.
Keywords Energy conversion
Euv(Extreme ultraviolet) lithography
Harmonic generators
Hhg(High harmonic generation)
Lithography
Microelectronics
Optical parametric amplification
Photon beams
Single harmonic energy
Ultraviolet equipment


 
Source Agency Non Paid ADAS
NTIS Subject Category 49 - Electrotechnology
46C - Optics & Lasers
Corporate Author Massachusetts Inst. of Tech., Cambridge. Dept. of Electrical Engineering and Computer Science.
Document Type Technical report
Title Note Final rept. 15 Aug 2010-14 Aug 2011.
NTIS Issue Number 1302
Contract Number FA9550-10-1-0471

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