Accession Number ADA562385
Title Towards Prognostics of Power MOSFETs: Accelerated Aging and Precursors of Failure.
Publication Date Oct 2010
Media Count 11p
Personal Author A. Saxena J. R. Celaya K. Goebel P. Wysocki S. Saha
Abstract This paper presents research results dealing with power MOSFETs (metal oxide semiconductor field effect transistor) within the prognostics and health management of electronics. Experimental results are presented for the identification of the on-resistance as a precursor to failure of devices with die-attach degradation as a failure mechanism. Devices are aged under power cycling in order to trigger die-attach damage. In situ measurements of key electrical and thermal parameters are collected throughout the aging process and further used for analysis and computation of the on-resistance parameter. Experimental results show that the devices experience die-attach damage and that the on-resistance captures the degradation process in such a way that it could be used for the development of prognostics algorithms (data-driven or physics-based).
Keywords Aging(Materials)
Component reports
Die-attach damage
Failure(Electronics)
Mosfet semiconductors
Precursors
Prognostics
Symposia


 
Source Agency Non Paid ADAS
NTIS Subject Category 49 - Electrotechnology
Corporate Author National Aeronautics and Space Administration, Moffett Field, CA. Ames Research Center.
Document Type Technical report
Title Note Conference paper.
NTIS Issue Number 1225
Contract Number N/A

Science and Technology Highlights

See a sampling of the latest scientific, technical and engineering information from NTIS in the NTIS Technical Reports Newsletter

Acrobat Reader Mobile    Acrobat Reader