Accession Number ADA559207
Title Crossbar Nanocomputer Development.
Publication Date Apr 2012
Media Count 56p
Personal Author N. C. Cady
Abstract This effort expanded development of memristive nanoelectronic junction materials for high density memory and advanced logic applications. The focus of the effort was to develop metal oxide materials for resistive memory devices (RMDs), which are also known as memristors or resistive random access memory (Re-RAM or RRAM). The major goal was to fabricate such devices in a crossbar configuration (overlapping metal lines which create multiple junctions in an array format) which would enable ultra high density arrays of devices. These arrays could eventually be used for high density memory applications, or could replace transistors in conventional CMOS architectures. The deliverable for this effort was to demonstrate a 2 x 2 crossbar structure (4 crossover points) that could be tested and compared to simulations which were performed in parallel. Our efforts on this project resulted in successful materials selection of high-performance metal oxides, development of the 2 x 2 crossbar (and even a 12 x 12 crossbar) array, and successful modeling of resistive memory circuits.
Keywords Complementary metal oxide semicondu
Crossbar
Memory devices
Memristors
NanoelectronicsWuafrlt2cncbnd
Nanomaterials
Nanotechnology


 
Source Agency Non Paid ADAS
NTIS Subject Category 62A - Computer Hardware
46D - Solid State Physics
Corporate Author State Univ. of New York at Albany. School of Nano Sciences and Nano Engineering.
Document Type Technical report
Title Note Final rept. Oct 2009-Oct 2011.
NTIS Issue Number 1219
Contract Number FA8750-09-1-0231

Science and Technology Highlights

See a sampling of the latest scientific, technical and engineering information from NTIS in the NTIS Technical Reports Newsletter

Acrobat Reader Mobile    Acrobat Reader