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Accession Number
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ADA559202
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Title
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Electrical Spin Injection and Transport in Germanium (Preprint).
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Publication Date
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2011
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Media Count
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18p
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Personal Author
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F. Xiu L. Chang M. Wang W. Han Y. Zhou
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Abstract
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We report the first experimental demonstration of electrical spin injection, transport and detection in bulk germanium (Ge). The non-local magnetoresistance in n-type Ge is observable up to 225K. Our results indicate that the spin relaxation rate in the n-type Ge is closely related to the momentum scattering rate, which is consistent with the predicted Elliot-Yafet spin relaxation mechanism for Ge. The bias dependence of the nonlocal magnetoresistance and the spin lifetime in n-type Ge is also investigated.
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Keywords
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Electron spin
Ferromagnetic metals
Germanium
Magnetoresistance
Semiconductors
Spin accumulation
Spin detection
Spin injection
Spin lifetime
Spin polarized electrons
Spin relaxation
Spin transport
Spin valve signals
Spintronic devices
Spintronics
Tunnel junctions
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Source Agency
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Non Paid ADAS
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NTIS Subject Category
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49 - Electrotechnology
46D - Solid State Physics
99F - Physical & Theoretical Chemistry
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Corporate Author
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California Univ., Los Angeles. Device Research Lab.
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Document Type
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Journal article
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Title Note
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Journal article preprint.
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NTIS Issue Number
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1219
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Contract Number
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N/A
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