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Accession Number
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ADA559017
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Title
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Calculation of Vertical and Horizontal Mobilities in InAs/GaSb Superlattices (Postprint).
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Publication Date
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Oct 2011
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Media Count
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16p
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Personal Author
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F. Szmulowicz G. J. Brown H. J. Haugan S. Elhamri
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Abstract
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Superlattice (SL) devices such as infrared detectors and quantum- cascade lasers rely on efficient transport of carriers perpendicular to the SL layers by drift and/or diffusion. While horizontal mobilities are measured routinely, measurements of perpendicular-carrier mobilities require nonstandard experimental techniques such as the geometric magneto-resistance. Here we show how perpendicular mobilities can be estimated from horizontal mobility measurements and calculated mobilities. We treat low-temperature horizontal and vertical transport in SL on an equal footing by calculating both mobilities using the same interface roughness scattering (IRS) model from a rigorous solution of the Boltzmann transport equation. The calculation is specialized to the case of InAs/GaSb SLs, which are of current interest in the development of third-generation infrared detector focal plane arrays. The results are compared to available data.
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Keywords
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Boltzmann equation
Diffusion
Efficiency
Focal plane arrays
Horizontal orientation
Indium arsenides
Infrared detectors
Low temperature
Photodiodes
Roughness
Superlattices
Vertical orientation
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Source Agency
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Non Paid ADAS
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NTIS Subject Category
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46D - Solid State Physics
99F - Physical & Theoretical Chemistry
63C - Infrared & Ultraviolet Detection
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Corporate Author
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Air Force Research Lab., Wright-Patterson AFB, OH. Materials and Manufacturing Directorate.
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Document Type
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Journal article
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Title Note
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Journal articles.
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NTIS Issue Number
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1219
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Contract Number
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N/A
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