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Accession Number
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ADA557932
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Title
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Full-Scale Self-Emissive Blue and Green Microdisplays Based on GaN Micro-LED Arrays.
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Publication Date
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2012
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Media Count
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9p
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Personal Author
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C. Bradford D. Y. Lie J. Day J. Li J. Y. Lin
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Abstract
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Micro-size light emitting diode (microLED) arrays based on III- nitride semiconductors have emerged as a promising technology for a wide range of applications. If InGaN microLED arrays can be integrated on to Si complementary metal-oxide-semiconductor (CMOS) substrates for active driving, these devices could play crucial roles in ultra-portable products such as next generation pico-projectors, as well as in emerging fields such as biophotonics and optogenetics. Here we present a demonstration of, and methods for, creating a high resolution solid-state self-emissive microdisplay based on InGaN/GaN semiconductors. An energy efficient active drive scheme is accomplished by integrating micro-emitter arrays with CMOS active matrix drivers that are flip- chip bonded together via indium metal bumps.
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Keywords
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Active drive
Brightness
Display systems
Flip chip bonding
Gallium nitrides
Iii nitride wide bandgap semiconductors
Iii to v and cmos integration
Light emitting diodes
Microled array
Nanotechnology
Self emissive displays
Semiconductors
Solid state electronics
Solid state microdisplays
Symposia
Vga(Video graphics array)
Wafers
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Source Agency
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Non Paid ADAS
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NTIS Subject Category
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49E - Optoelectronic Devices & Systems
62A - Computer Hardware
46D - Solid State Physics
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Corporate Author
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Army Communications-Electronics Command, Fort Belvoir, VA. Night Vision and Electronics Sensors Directorate.
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Document Type
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Technical report
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Title Note
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Conference paper.
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NTIS Issue Number
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1217
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Contract Number
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W909MY-09-C-0014
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