Accession Number ADA557932
Title Full-Scale Self-Emissive Blue and Green Microdisplays Based on GaN Micro-LED Arrays.
Publication Date 2012
Media Count 9p
Personal Author C. Bradford D. Y. Lie J. Day J. Li J. Y. Lin
Abstract Micro-size light emitting diode (microLED) arrays based on III- nitride semiconductors have emerged as a promising technology for a wide range of applications. If InGaN microLED arrays can be integrated on to Si complementary metal-oxide-semiconductor (CMOS) substrates for active driving, these devices could play crucial roles in ultra-portable products such as next generation pico-projectors, as well as in emerging fields such as biophotonics and optogenetics. Here we present a demonstration of, and methods for, creating a high resolution solid-state self-emissive microdisplay based on InGaN/GaN semiconductors. An energy efficient active drive scheme is accomplished by integrating micro-emitter arrays with CMOS active matrix drivers that are flip- chip bonded together via indium metal bumps.
Keywords Active drive
Display systems
Flip chip bonding
Gallium nitrides
Iii nitride wide bandgap semiconductors
Iii to v and cmos integration
Light emitting diodes
Microled array
Self emissive displays
Solid state electronics
Solid state microdisplays
Vga(Video graphics array)

Source Agency Non Paid ADAS
NTIS Subject Category 49E - Optoelectronic Devices & Systems
62A - Computer Hardware
46D - Solid State Physics
Corporate Author Army Communications-Electronics Command, Fort Belvoir, VA. Night Vision and Electronics Sensors Directorate.
Document Type Technical report
Title Note Conference paper.
NTIS Issue Number 1217
Contract Number W909MY-09-C-0014

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