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Accession Number ADA557932
Title Full-Scale Self-Emissive Blue and Green Microdisplays Based on GaN Micro-LED Arrays.
Publication Date 2012
Media Count 9p
Personal Author C. Bradford D. Y. Lie J. Day J. Li J. Y. Lin
Abstract Micro-size light emitting diode (microLED) arrays based on III- nitride semiconductors have emerged as a promising technology for a wide range of applications. If InGaN microLED arrays can be integrated on to Si complementary metal-oxide-semiconductor (CMOS) substrates for active driving, these devices could play crucial roles in ultra-portable products such as next generation pico-projectors, as well as in emerging fields such as biophotonics and optogenetics. Here we present a demonstration of, and methods for, creating a high resolution solid-state self-emissive microdisplay based on InGaN/GaN semiconductors. An energy efficient active drive scheme is accomplished by integrating micro-emitter arrays with CMOS active matrix drivers that are flip- chip bonded together via indium metal bumps.
Keywords Active drive
Brightness
Display systems
Flip chip bonding
Gallium nitrides
Iii nitride wide bandgap semiconductors
Iii to v and cmos integration
Light emitting diodes
Microled array
Nanotechnology
Self emissive displays
Semiconductors
Solid state electronics
Solid state microdisplays
Symposia
Vga(Video graphics array)
Wafers

 
Source Agency Non Paid ADAS
NTIS Subject Category 49E - Optoelectronic Devices & Systems
62A - Computer Hardware
46D - Solid State Physics
Corporate Author Army Communications-Electronics Command, Fort Belvoir, VA. Night Vision and Electronics Sensors Directorate.
Document Type Technical report
Title Note Conference paper.
NTIS Issue Number 1217
Contract Number W909MY-09-C-0014

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